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 Product Specification
www.jmnic.com
Silicon NPN Power Transistors
DESCRIPTION With TO-220 package Low collector saturation voltage Complement to type 2SB826 Wide area of safe operation APPLICATIONS Relay drivers, High-speed inverters, Converters General high-current switching applications
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
2SD1062
Absolute maximum ratings (Ta=25ae )
SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25ae CONDITIONS Open emitter Open base Open collector VALUE 60 50 6 12 15 40 150 -55~150 ae ae UNIT V V V A A W
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=1mA ;RBE= IC=1mA ;IE=0 IE=1mA ;IC=0 IC=6A, IB=0.3A VCB=40V;IE=0 VEB=4V; IC=0 IC=1A ; VCE=2V IC=5A ; VCE=2V IC=1A ; VCE=5V 70 30 10 MIN 50 60 6 TYP.
2SD1062
SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat ICBO IEBO hFE-1 hFE-2 fT
MAX
UNIT V V V
0.4 0.1 0.1 280
V mA mA
MHz
Switching times ton ts tf Turn-on time Storage time Fall time IC=5.0A IB1=- IB2=0.5A 0.10 0.05 1.20 |I |I |I s s s
hFE-1 classifications Q 70-140 R 100-200 S 140-280
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD1062
Fig.2 outline dimensions (unindicated tolerance:A
0.10 mm)
JMnic


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